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- W2062877670 abstract "High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits and graded reach-throughs to deep active device components." @default.
- W2062877670 created "2016-06-24" @default.
- W2062877670 creator A5073566939 @default.
- W2062877670 date "1985-01-01" @default.
- W2062877670 modified "2023-10-18" @default.
- W2062877670 title "High energy ion implantation" @default.
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- W2062877670 doi "https://doi.org/10.1016/0168-583x(85)90645-7" @default.
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