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- W135668314 abstract "Interface states are produced in MOS capacitors following exposure to pulsed e-beam irradiation. Data is presented here which show that, in addition to hole transport to the SiO2/Si interface, a positive field must be maintained across that interface to observe the long-term time-dependent buildup of interface states in wet-oxide capacitors. Results of detailed experiments on the time dependence of the interface-state buildup in wet-oxide MOS capacitors suggest that some chemical species in a metastable state in the SiO2/Si interface region must be removed in order to produce an interface state. Processes occurring at the interface that may be responsible for the buildup of interface states in wet- and dry-oxide capacitors are discussed." @default.
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- W135668314 date "1978-01-01" @default.
- W135668314 modified "2023-10-16" @default.
- W135668314 title "INTERFACE STATES RESULTING FROM A HOLE FLUX INCIDENT ON ON THE SiO2/Si INTERFACE" @default.
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- W135668314 doi "https://doi.org/10.1016/b978-0-08-023049-8.50079-8" @default.
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