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- W1462905611 abstract "Publisher Summary This chapter discusses the establishment of a reproducible gallium arsenide (GaAs) materials base to realize the full potential of direct ion implantation as a reliable, cost-effective fabrication technology of high-performance GaAs metal–semiconductor field effect transistor (MESFET) devices and integrated circuits (IC). The considerable efforts directed at improving basic GaAs materials and processes result from the strong interdependence of high-frequency GaAs circuit performance upon substrate quality. Many of the conventional wafer preparation techniques used today in silicon have been applied on a laboratory scale to large liquid-encapsulated Czochralski (LEC)-grown GaAs crystals. The low-breakage processing of GaAs demands the development of special handling techniques based on the automated cassette and wafer transport methods that are being utilized in silicon IC manufacturing." @default.
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- W1462905611 date "1984-01-01" @default.
- W1462905611 modified "2023-09-26" @default.
- W1462905611 title "Chapter 1 High-Purity LEC Growth and Direct Implantation of GaAs for Monolithic Microwave Circuits" @default.
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- W1462905611 doi "https://doi.org/10.1016/s0080-8784(08)62773-8" @default.
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