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- W1985487199 abstract "This paper reports an improved back-gate bias effect model considering hole accumulation at the Si/SiO2 interface above the field oxide for ultra-thin SOI NMOS devices using an effective charge concentration in the hole accumulation region. As confirmed by the PISCES results, the improved body effect model provides a much better accuracy in the threshold voltage and the body effect coefficient for the ultra-thin SOI NMOS devices as compared to the previous model." @default.
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- W1985487199 date "1992-11-01" @default.
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- W1985487199 title "A back-gate bias effect model considering the charge accumulation behavior above the field oxide for ultra-thin SOI NMOS devices" @default.
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- W1985487199 doi "https://doi.org/10.1016/0038-1101(92)90194-h" @default.
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