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- W2008406142 abstract "In this work SiOxNy films are produced and characterized. Series of samples were deposited by the plasma enhanced chemical vapor deposition (PECVD) technique at low temperatures from silane (SiH4), nitrous oxide (N2O) and helium (He) precursor gaseous mixtures, at different deposition power in order to analyze the effect of this parameter on the films structural properties, on the SiOxNy/Si interface quality and on the SiOxNy effective charge density. In order to compare the film structural properties with the interface (SiOxNy/Si) quality and effective charge density, MOS capacitors were fabricated using these films as dielectric layer. X-ray absorption near-edge spectroscopy (XANES), at the Si–K edge, was utilized to investigate the structure of the films and the material bonding characteristics were analyzed through Fourier transform infrared spectroscopy (FTIR). The MOS capacitors were characterized by low and high frequency capacitance (C–V) measurements, in order to obtain the interface state density (Dit) and the effective charge density (Nss). An effective charge density linear reduction for decreasing deposition power was observed, result that is attributed to the smaller amount of ions present in the plasma for low RF power." @default.
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- W2008406142 date "1996-12-01" @default.
- W2008406142 modified "2023-10-14" @default.
- W2008406142 title "Optimization of PECVD silicon oxynitride for silicon MIS devices with low interface state density" @default.
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- W2008406142 doi "https://doi.org/10.1016/s0038-1101(96)00101-3" @default.
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