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• W2012467064 abstract "In this paper, a model for the a.c./transient behaviour of an Si resistor at liquid-He temperatures is established, taking account of the dominant carrier-dopant interactions, i.e. shallow-level impact ionisation and carrier capture. As will be shown, the corresponding set of coupled differential equations can be linearized in the small-signal approximation, enablinig an analytical solution. The resulting small-signal impedance is a dampled oscillatory circuit, whereby the impact ionisation/capture events are represented by an R-L series equivalent. The corresponding R-L time constant is characteristic for the (quasi-) exponential variation of the injected space-charge and consequently for the transient behaviour of Si devices at 4.2 K. Finally, the occurrence of spontaneous, or forced oscillatory behaviour, which is occasionally observed in the low-frequency noise spectrum of e.g. a metal-oxide semiconductor transistor, is discussed." @default.
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• W2012467064 date "1991-11-01" @default.
• W2012467064 modified "2023-10-02" @default.
• W2012467064 title "Small-signal a.c. impedance of an Si resistor at liquid-helium temperatures" @default.
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• W2012467064 doi "https://doi.org/10.1016/0038-1101(91)90060-c" @default.
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