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• W2014075510 abstract "Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60A within 3000A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820nm is an order of magnitude larger than that pumped at 880nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier‐carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the carrier dynamics is strongly affected by N incorporation that causes local defects in InGaAsN SQWs to reduce the carrier relaxation." @default.
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• W2014075510 date "2008-03-20" @default.
• W2014075510 modified "2023-10-18" @default.
• W2014075510 title "Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells" @default.
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• W2014075510 doi "https://doi.org/10.1088/0022-3727/41/8/085107" @default.
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