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• W2017235955 abstract "High performance graphene field-effect transistors (FETs) with a solution-processed Al2O3 sensing membrane were fabricated. The solution-processed deposition technique offers a lot of advantages in terms of low cost, simplicity, high throughput, and large-area devices. Especially, the solution-deposition process is well-suited for membrane formation of graphene FETs, which is vulnerable to plasma or thermal processes for insulator growth on surface. The graphene FETs with a solution-deposited Al2O3 sensing membrane exhibited a higher pH sensitivity as well as good chemical stability. Therefore, the graphene FETs with solution-deposited Al2O3 sensing membrane are very promising to biological sensors application." @default.
• W2017235955 created "2016-06-24" @default.
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• W2017235955 date "2014-04-14" @default.
• W2017235955 modified "2023-10-17" @default.
• W2017235955 title "Fabrication of high-performance graphene field-effect transistor with solution-processed Al₂O₃ sensing membrane" @default.
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• W2017235955 doi "https://doi.org/10.1063/1.4871865" @default.
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