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- W2020123149 abstract "In this paper we demonstrate the recovery of Ohmic contacts formed on C-face 4H-SiC following high temperature post-processing. After a typical high-κ dielectric anneal in O2 for 3 minutes at 650 °C, replacing the metallization stack is revealed to significantly reduce the damage produced in the I-V characteristics. Using C-AFM we have also studied the mechanisms responsible for Ohmic contact formation, presenting a possible relationship between changes in the SiC crystal orientation and the establishment of Ohmic behaviour." @default.
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- W2020123149 date "2011-03-01" @default.
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- W2020123149 title "Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing" @default.
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- W2020123149 doi "https://doi.org/10.4028/www.scientific.net/msf.679-680.469" @default.
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