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- W2024440892 abstract "One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition (CVD) method on natural cleavage plane (110) of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite (w-InN), zincblende structure (z-InN) is only reported for 2D InN crystals before. However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich–Schwoebel barrier." @default.
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- W2024440892 date "2008-05-01" @default.
- W2024440892 modified "2023-09-22" @default.
- W2024440892 title "Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods" @default.
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- W2024440892 doi "https://doi.org/10.1088/0256-307x/25/5/070" @default.
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