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• W2027740977 abstract "We used pulse-mode rapid thermal annealing to reoxidize a sputter-deposited hafnium oxide film. This reoxidation enabled the densification of the processed film, and low-temperature tetragonal hafnium oxide was obtained. When a hafnium oxide/silicon structure was subjected to the proposed process, some oxygen atoms were formed by hafnium oxide, which then react with silicon. A thin hafnium silicate layer was formed between reoxidized hafnium oxide and silicon, which was beneficial for improving the interfacial condition of hafnium oxide and silicon. The obtained low-temperature tetragonal hafnium oxide film had a high dielectric constant of 23 and a high dielectric strength of 12.7 MV/cm." @default.
• W2027740977 created "2016-06-24" @default.
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• W2027740977 date "2014-10-06" @default.
• W2027740977 modified "2023-09-28" @default.
• W2027740977 title "Tetragonal hafnium oxide film prepared by low-temperature oxidation" @default.
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• W2027740977 doi "https://doi.org/10.7567/jjap.53.11ra07" @default.
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