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• W2035590488 abstract "Abstract Ultrathin SiO2 layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO2 interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE)." @default.
• W2035590488 created "2016-06-24" @default.
• W2035590488 creator A5007426095 @default.
• W2035590488 creator A5045395353 @default.
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• W2035590488 date "2011-01-01" @default.
• W2035590488 modified "2023-09-25" @default.
• W2035590488 title "Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies" @default.
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• W2035590488 doi "https://doi.org/10.2478/s11534-011-0053-0" @default.
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