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- W2040670069 abstract "The formation mechanism of misfit dislocations in lattice-mismatched InxGa1−xAs epilayers (0.2≤x≤1) grown on GaAs substrates has been investigated experimentally. The results suggest that 1/3〈111〉 Frank partial dislocations are grown-in at island edges in highly lattice-mismatched epilayers (x≥0.4). Then after further island growth 90° Shockley partial dislocations are nucleated to remove the stacking faults, reacting with the Frank partials to form complete 90° dislocations. An atomic model is proposed to explain the formation mechanism of the Frank partial dislocation. This model could explain the observed change in the dominant type of dislocation from the 60° at small mismatches to 90° edge dislocations at large lattice mismatches." @default.
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- W2040670069 date "1996-01-01" @default.
- W2040670069 modified "2023-09-26" @default.
- W2040670069 title "Dislocation formation mechanism in strained In<i>x</i>Ga1−<i>x</i>As islands grown on GaAs(001) substrates" @default.
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- W2040670069 doi "https://doi.org/10.1063/1.116773" @default.
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