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• W2053751550 abstract "We report a Raman spectroscopy study performed at room temperature on InxGa1—xN epitaxial layers grown by metalorganic chemical vapour deposition on top of GaN/sapphire (0001) substrates. Resonant Raman measurements have been performed using excitation energies of 2.34, 2.54 and 3.02 eV. A shift of the A1(LO) phonon mode frequency was observed under different excitation energies. This is interpreted with respect to the composition and strain variations within the sample. The A1(LO) phonon line shape is analysed using a Spatial Correlation Model (SC). The structural parameters were determined by Rutherford backscattering spectrometry (RBS)." @default.
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• W2053751550 date "2001-11-01" @default.
• W2053751550 modified "2023-10-01" @default.
• W2053751550 title "Indium Distribution within InxGa1?xN Epitaxial Layers: A Combined Resonant Raman Scattering and Rutherford Backscattering Study" @default.
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• W2053751550 doi "https://doi.org/10.1002/1521-3951(200111)228:1<173::aid-pssb173>3.0.co;2-r" @default.
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