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- W2055143965 abstract "The thermal conductivity of oxide thin films deposited using dc, rf, and ion-beam sputtering is measured in the temperature range 80--400 K using the 3ensuremath{omega} method. Thermal conductivity data for amorphous thin films of ${mathrm{SiO}}_{2}$ are nearly identical to bulk a-${mathrm{SiO}}_{2}$. Data for amorphous ${mathrm{Al}}_{2}$${mathrm{O}}_{3}$, while having a magnitude and temperature dependence similar to bulk amorphous oxides, show a dependence on deposition method; rf sputtering of an ${mathrm{Al}}_{2}$${mathrm{O}}_{3}$ target produces films with a thermal conductivity 35% smaller than films prepared by ion-beam sputtering. Microcrystalline thin films show a rich variety of behavior: the conductivity of ${mathrm{TiO}}_{2}$ films depends on the substrate tempreature ${mathit{T}}_{mathit{s}}$ and approaches the thermal conductivity of bulk ${mathrm{TiO}}_{2}$ ceramics when ${mathit{T}}_{mathit{s}}$ensuremath{simeq}400 ifmmode^circelsetextdegreefi{}C; ${mathrm{HfO}}_{2}$ films show glasslike thermal conductivity independent of annealing temperature up to 900 ifmmode^circelsetextdegreefi{}C; and MgO films display a crystalline thermal conductivity that is greatly reduced relative bulk values." @default.
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- W2055143965 date "1995-07-01" @default.
- W2055143965 modified "2023-10-16" @default.
- W2055143965 title "Thermal conductivity of sputtered oxide films" @default.
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- W2055143965 doi "https://doi.org/10.1103/physrevb.52.253" @default.
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