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• W2055596475 abstract "This paper concerns an attempt to dope a protective SiO2 layer on n-Si so that the latter could act as a stable photo-anode. A SiO2 film was electrochemically grown over an n-Si surface on which a submonolayer amount of Pt had been deposited. Thereafter the electrode was subjected to a heat treatment. There resulted an electrode which was photoactive for more than 100 h. Pt is present in the film at 0.25 (at Si/SiO2) to 0.03 (SiO2/solution) atomic per cent. Its form is as Pt and PtO. The energy level of the Pt is close to the n-Si valence band edge. The photocurrent density passes through a maximum when the Pt present in the film corresponds formally to 0.25 monolayer. Higher activities probably cannot be obtained because Pt also diffuses into Si and causes recombination of hole-electron pairs. An indirect estimate of the film resistance shows a specific conductance of 10−9 mho cm−1. The corresponding mobility would be around 10−7 cms−1 (V cm−1)−1 and hence too small for a charge carrier in band conduction. It is suggested that electrons tunnel between Pt atoms. A 30% decrease of photocurrent in 100 h is probably due to residual film growth. The approach has advantages but requires the seeking of improved doping." @default.
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• W2055596475 date "1984-10-01" @default.
• W2055596475 modified "2023-09-26" @default.
• W2055596475 title "Investigation of a protective conducting silica film on n-silicon" @default.
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• W2055596475 doi "https://doi.org/10.1016/0013-4686(84)87022-x" @default.
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