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- W2056985535 abstract "Abstract Experiments performed to characterize the silicon etching occurring at the silicon-silicon dioxide interface during thermal oxidation of silicon in dry oxygen-HCl atmospheres at 1100 °C are described. The etching was accompanied by bubble formation or bowing of the silicon dioxide film and ultimately by complete loss of adhesion of the thermally grown film. Pre-oxidation experiments with dry oxygen suggest that silicon etching is primarily dependent upon the chlorine concentration at the silicon-silicon dioxide interface, with oxide growth prior to HCl addition having a small effect." @default.
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- W2056985535 date "1977-04-01" @default.
- W2056985535 modified "2023-09-26" @default.
- W2056985535 title "Investigation of silicon etching and silicon dioxide bubble formation during silicon oxidation in HCl-oxygen atmospheres" @default.
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- W2056985535 doi "https://doi.org/10.1016/0040-6090(77)90086-4" @default.
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