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- W2060331409 abstract "This paper describes the study of the conventional silicon/glass anodic bonding with plasma enhanced chemical vapor deposited silicon carbide (PE-SiC) as the intermediate layer, in order to evaluate the feasibilities of applying PE-SiC as the device's passivation layer prior to the packaging bonding and construction layer based on the bond-and-transfer technique. It is found that the mechanism of this bonding is similar to the traditional anodic bonding. As the PE-SiC thickened, the bond strength declined; meanwhile, the leak rate remained at the same level with the silicon/glass bonding. Further experiments revealed that the bonding increased the interlayer's tensile stress by 70.7 MPa and diminished the stress gradient by 24.6 MPa ?m?1." @default.
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- W2060331409 date "2012-07-26" @default.
- W2060331409 modified "2023-09-26" @default.
- W2060331409 title "Investigation of silicon/glass anodic bonding with PECVD silicon carbide as the intermediate layer" @default.
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- W2060331409 doi "https://doi.org/10.1088/0960-1317/22/9/095011" @default.
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