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- W2073182890 abstract "Nitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E+ transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. The required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. This finding suggests that the nitrogen dimers are connected with nonradiative recombination centers." @default.
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- W2073182890 date "2004-03-10" @default.
- W2073182890 modified "2023-10-02" @default.
- W2073182890 title "Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy" @default.
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- W2073182890 doi "https://doi.org/10.1063/1.1669070" @default.
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