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• W2077463305 abstract "[1 0 0]-Oriented epitaxial and polycrystalline Ba1−xSrxSi2 films with various x values were grown by molecular beam epitaxy (MBE) on Si(1 1 1) and transparent fused silica substrates, respectively. The indirect absorption edge Eedge in Ba1−xSrxSi2 increased with increasing Sr composition, x, and reached approximately 1.40 eV when x=0.52. However, the Eedge value was almost saturated for higher x values, and the formation of homogeneous Ba1−xSrxSi2 films was difficult for samples in which x>0.6. Furthermore, phase separation was observed when x=0.77. Using a thermodynamic model, the average phonon energy in BaSi2 was estimated from the temperature dependence of the optical absorption edge to be approximately 25 meV." @default.
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• W2077463305 date "2007-04-01" @default.
• W2077463305 modified "2023-09-26" @default.
• W2077463305 title "Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1−xSrxSi2 for photovoltaic application" @default.
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• W2077463305 doi "https://doi.org/10.1016/j.jcrysgro.2006.11.236" @default.
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