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- W2078653784 abstract "Hydrogenated amorphous silicon (a-Si:H) films were prepared by sputtering a Si target in an atmosphere of Ar+H2. The Er (and Er+Yb) doping of the films was achieved by partially covering the Si target with small pieces of Er (Er+Yb) metal. After deposition the films were annealed up to 700 °C in an inert atmosphere. Ion beam analyses, Raman spectroscopy, optical transmission and photoluminescence measurements were employed for characterization purposes. According to the experimental results, thermal treatments up to ~300 °C do not significantly alter the composition, atomic structure or optical bandgap of the present a-Si:H films. On the contrary, the Er-related photoluminescence intensity at 1540 nm increases and reaches its maximum at about 400 °C. Treatments at temperatures higher than ~400 °C reduce both the Er-related light emission and the optical bandgap of the films due to the out-diffusion of hydrogen atoms. Furthermore, the relatively small optical bandgap and the presence of tail states prevent any optical activity of Yb3+ ions in the measured a-Si:H films. At the present doping levels and sample characteristics, ytterbium only increases the incidence of non-radiative processes." @default.
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- W2078653784 date "2006-07-31" @default.
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- W2078653784 title "Optical properties of Er and Er+Yb doped hydrogenated amorphous silicon films" @default.
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- W2078653784 doi "https://doi.org/10.1088/0953-8984/18/32/018" @default.
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