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- W2081983810 abstract "In this work, the interface properties of amorphous indium–gallium–zinc oxide thin film transistors annealed at different temperatures ranging from 150 to 250 °C are studied by temperature dependent mobility and low-frequency noise (LFN) characterizations. The dominant scattering mechanism for carrier transport is found to be Coulomb scattering based on gate bias and temperature dependent mobility measurement. Meanwhile, as the annealing temperature increases, the dominant mechanism of LFN within the device channel varies from carrier number fluctuation to carrier mobility fluctuation. The border trap density as well as the distribution properties of charged border traps is deduced. The present results suggest that annealing at higher temperature has a more remarkable effect on removing deeper border traps than traps closer to the channel/dielectric interface." @default.
- W2081983810 created "2016-06-24" @default.
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- W2081983810 date "2015-07-01" @default.
- W2081983810 modified "2023-10-13" @default.
- W2081983810 title "Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements" @default.
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- W2081983810 doi "https://doi.org/10.1016/j.sse.2015.03.011" @default.
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