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- W209623223 abstract "An attempt is made to investigate theoretically, the effective, electron mass inn-channel inversion layers on ternary semiconductors on the basis of three band Kane model which has been stated in the literature to be the most valid model for the same semiconductor. It is found, takingn-channel inversion layers on Hg1−x Cd x Te as an example, that for the low electric field limit the effective electron mass at the Fermi level depends both on the electric subband index and the Fermi energy due to the combined influence of the spin-orbit splitting parameter and the band non-parabolicity, respectively, whereas the same mass for high electric field limit depends on the electric subband index due to the spin-orbit splitting only. Besides, the Fermi level masses differ widely for relatively low values of the surface electric field in the low electric field limit and they decrease with increasing subband index for both limits. The well-known results for inversion layers on two-band Kane model are also obtained from the, expressions derived." @default.
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- W209623223 date "1990-03-01" @default.
- W209623223 modified "2023-09-27" @default.
- W209623223 title "Theoretical analysis of the effective electron mass inn-channel inversion layers on ternary semiconductors" @default.
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- W209623223 doi "https://doi.org/10.1007/bf03054259" @default.
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