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- W2137147860 abstract "Parasitic series resistance and mobility degradation are two important parameters for modeling and circuit simulation of MOSFETs. We present a new method to extract these two parameters from the current-voltage characteristics of SOI MOSFETs biased in the saturation region. This method is based on an integration function which reduces errors associated with the extraction procedure. Measured data and simulation results of SOI MOSFETs are used to test and verify the present method." @default.
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- W2137147860 date "2005-08-25" @default.
- W2137147860 modified "2023-10-16" @default.
- W2137147860 title "A procedure to extract mobility degradation, series resistance and threshold voltage of SOI MOSFETs in the saturation region" @default.
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- W2137147860 doi "https://doi.org/10.1109/icsict.2001.982037" @default.
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