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- W2197644553 abstract "Electrical and structural properties of metal-oxide-semiconductor capacitors having as dielectric nanoscopic or films deposited on nitrided or nonnitrided Si substrates were investigated. The electrical superiority of stacks was evidenced by a dielectric constant of 19 and a leakage current density of at a gate voltage of , for a capacitance equivalent to silicon oxide thickness of . Morphology, composition, and structure of the stacks were accessed by X-ray diffraction and reflectometry, spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and narrow resonant nuclear reaction profiling with isotopic substitution. In spite of presenting crystalline phases associated with , the dielectric layers led to a smoother and thinner interfacial layer, improved by the thermal nitridation of the Si substrate prior to high-κ deposition. This -like interlayer thickness is self-limited even after postdeposition annealing owing to the formation of an effective diffusion barrier by the strong and bonds, which is also effective in preventing substrate oxidation." @default.
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- W2197644553 date "2008-01-01" @default.
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- W2197644553 title "Electrical Properties and Interfacial Characteristics of RuO[sub 2]∕HfAlO[sub x]∕SiON∕Si and RuO[sub 2]∕LaAlO[sub 3]∕SiON∕Si Capacitors" @default.
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- W2197644553 doi "https://doi.org/10.1149/1.2952529" @default.
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