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- W2344776369 abstract "A RRAM cell integrated with a selector was fabricated. The device with 1S1R structure has Pt/Al2O3/NbO2/TaOy/Ta2O5-x/Pt stacks. Al2O3 serves as the current compliance layer. NbO2 layer works as the threshold switching selector. TaOy is the base layer for resistive switching. The RRAM switching is based on the conduction filaments formed and ruptured in the Ta2O5-x layer. For the fabricated device, nonlinearity of LRS state at read voltage and 1/2 read voltage is about 30. The ON/OFF ratio of the device is more than 100." @default.
- W2344776369 created "2016-06-24" @default.
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- W2344776369 date "2015-10-01" @default.
- W2344776369 modified "2023-09-28" @default.
- W2344776369 title "1S1R device with self-compliance property for high density cross-point memory applications" @default.
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- W2344776369 doi "https://doi.org/10.1109/nvmts.2015.7457494" @default.
- W2344776369 hasPublicationYear "2015" @default.
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