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- W2540930606 abstract "The effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the I d -V d characteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiC/SiO 2 interface, and also to the gettering of charged impurities and reduction of physical defects by the chlorine incorporated in the gate oxide." @default.
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- W2540930606 date "2006-06-08" @default.
- W2540930606 modified "2023-09-24" @default.
- W2540930606 title "Improved I-V Characteristics of SiC MOSFETs by TCE Thermal Gate Oxidation" @default.
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- W2540930606 doi "https://doi.org/10.1109/edssc.2005.1635399" @default.
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