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• W2885149884 abstract "the design of a Q-band high power amplifier (HPA) in Microwave Monolithic Integrated Circuit (MMIC) technology is presented. The HPA is fabricated in a 100nm gate length Gallium Nitride on Silicon (GaN-Si) technology. The HPA, based on a four-stage architecture, was designed accounting for the de-rating rules foreseen for spatial use and to work in continuous wave (CW) conditions. Nevertheless, the realized HPA can provide a saturated output power larger than 36.5dBm with a gain and a power added efficiency higher than 22dB and 30%, respectively, in the operative band from 37.5GHz to 42.5GHz. The chip area is 3.54 × 3.5 mm2. Such results are in line with others state-of-art HPAs realized in more expensive GaN processes based on Silicon Carbide, thus demonstrating that high resistivity Silicon substrate can be efficiently adopted also in such a peculiar application." @default.
• W2885149884 created "2018-08-22" @default.
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• W2885149884 date "2018-07-01" @default.
• W2885149884 modified "2023-10-17" @default.
• W2885149884 title "A 4W 37.5-42.5 GHz Power Amplifier MMIC in GaN on Si Technology" @default.
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• W2885149884 doi "https://doi.org/10.1109/prime.2018.8430333" @default.
• W2885149884 hasPublicationYear "2018" @default.
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