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• W2889840712 abstract "This paper presents an analytical study of the noise behavior and spectral responsivity of Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> alloy-based heterojunction phototransistors (HPTs) for different Sn compositions and base doping concentrations. The structure consists of n-Ge/p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> - Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-</sup> - Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> layers pseudomorphically grown on Si substrate via Ge virtual substrate, compatible with complementary metal-oxide-semiconductor technology. The high absorption coefficient of the alloy in base significantly improves signal-to-noise ratio in the high-frequency region, leading to efficient photodetection in the C - and L-bands of fiber-optic telecommunication window. A comparison is made between the theoretical findings for GeSn HPTs and the available data for currently employed group III-V compound-based HPTs, to examine if GeSn-based HPT can be a good alternative." @default.
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• W2889840712 date "2018-11-15" @default.
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• W2889840712 title "Noise Analysis of Group IV Material-Based Heterojunction Phototransistor for Fiber-Optic Telecommunication Networks" @default.
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• W2889840712 doi "https://doi.org/10.1109/jsen.2018.2869975" @default.
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