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• W2899515500 abstract "Low-carrier density and high-crystallinity molybdenum disulfide (MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) films were fabricated by low-temperature and clean process based on a UHV RF sputtering system. This paper focuses on improving crystallinity and reducing the number of sulfur defects of sputtered-MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> film. We have fabricated MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films at lower than 400°C using the sputtering and H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> S post-deposition annealing processes. Consequently, MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films with high crystallinity and appropriate S/Mo ratio were obtained. Eventually, a low carrier density of 3.5 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>17</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> and the Hall-effect mobility of 12 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> s <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> were achieved." @default.
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• W2899515500 date "2019-01-01" @default.
• W2899515500 modified "2023-09-27" @default.
• W2899515500 title "Low-Temperature MoS₂ Film Formation Using Sputtering and H₂S Annealing" @default.
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• W2899515500 doi "https://doi.org/10.1109/jeds.2018.2854633" @default.
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