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- W3118481699 abstract "This work focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic chemical vapor phase epitaxy (MOVPE). By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber bandgap of 1.50 eV by up to 100 mV. In the future these results will be implemented into two-terminal III-V//Si triple-junction solar cells to increase the conversion efficiency beyond the current record of 34.1 % under the AM1.5g solar spectrum." @default.
- W3118481699 created "2021-01-18" @default.
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- W3118481699 date "2020-06-14" @default.
- W3118481699 modified "2023-10-18" @default.
- W3118481699 title "Subcell Development for Wafer-Bonded III-V//Si Tandem Solar Cells" @default.
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- W3118481699 doi "https://doi.org/10.1109/pvsc45281.2020.9300801" @default.
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