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• W4200112224 abstract "This paper presents a setup to characterize GaN HEMTS devices under short-circuit events and the degradation of some of their parameters. First, the previous literature in the field is introduced. Both, the behavior under single and repetitive short-circuits and failure mechanisms are discussed. Then, a systematic method is proposed to on-board measure the critical electrical parameters and analyze the behavior of DUTs under short-circuit failures to build a reliability model. Subsequently, multiple tests with different conditions have been performed to characterize in detail GaN HEMTs. Finally, pure short-circuit tests have been performed to identify critical parameters and aging indicators. The reliability challenge of GaN devices could be addressed by having on-board, in-system prognostics, and device health monitoring techniques to predict device failures well ahead of time." @default.
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• W4200112224 date "2021-10-27" @default.
• W4200112224 modified "2023-10-16" @default.
• W4200112224 title "Test Bench Setup for characterization of GaN HEMT" @default.
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• W4200112224 doi "https://doi.org/10.1109/ee53374.2021.9628382" @default.
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