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• W4293660913 abstract "This paper presents a fully integrated high-voltage (HV) neural stimulator with on-chip HV generation. It consists of a neural stimulator front-end that delivers stimulation currents up to 2.08 mA with 5 bits resolution and a switched-capacitor DC-DC converter that generates a programmable voltage supply from 4.2 V to 13.2 V with 4 bits resolution. The solution was designed and fabricated in a standard 180 nm 1.8 V/3.3 V CMOS process and occupied an active area of 2.34 mm2. Circuit-level and block-level techniques, such as a proposed high-compliance voltage cell, have been used for implementing HV circuits in a low-voltage CMOS process. Experimental validation with an electrical model of the electrode−tissue interface showed that (1) the neural stimulator can handle voltage supplies up to 4 times higher than the technology’s nominal supply, (2) residual charge—without passive discharging phase—was below 0.12% for the whole range of stimulation currents, (3) a stimulation current of 2 mA can be delivered with a voltage drop of 0.9 V, and (4) an overall power efficiency of 48% was obtained at maximum stimulation current." @default.
• W4293660913 created "2022-08-31" @default.
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• W4293660913 date "2022-08-26" @default.
• W4293660913 modified "2023-10-14" @default.
• W4293660913 title "A Fully Integrated, Power-Efficient, 0.07–2.08 mA, High-Voltage Neural Stimulator in a Standard CMOS Process" @default.
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• W4293660913 doi "https://doi.org/10.3390/s22176429" @default.
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