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- Q58599159 description "article" @default.
- Q58599159 description "im November 2018 veröffentlichter wissenschaftlicher Artikel" @default.
- Q58599159 description "wetenschappelijk artikel" @default.
- Q58599159 description "наукова стаття, опублікована в листопаді 2018" @default.
- Q58599159 name "A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications" @default.
- Q58599159 name "A Novel One-Transistor Dynamic Random-Access Memory" @default.
- Q58599159 type Item @default.
- Q58599159 label "A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications" @default.
- Q58599159 label "A Novel One-Transistor Dynamic Random-Access Memory" @default.
- Q58599159 prefLabel "A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications" @default.
- Q58599159 prefLabel "A Novel One-Transistor Dynamic Random-Access Memory" @default.
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- Q58599159 P1476 "A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications" @default.
- Q58599159 P2093 "Ikhyeon Kwon" @default.
- Q58599159 P2093 "Il Hwan Cho" @default.
- Q58599159 P2093 "Jae-Hee Han" @default.
- Q58599159 P2093 "Jongmin Ha" @default.
- Q58599159 P2093 "Myeongsun Kim" @default.
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- Q58599159 P356 "10.3390/MI9110581" @default.
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- Q58599159 P577 "2018-11-07T00:00:00Z" @default.
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