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• W1518103677 abstract "We report on a hydrogen barrier necessary for a conventional passivation process of integrated SrBi2Ta2O9 (SBT)-based memories. The passivation process significantly degraded electrical properties of the memories, resulting from hydrogen damage in the SBT capacitors. Metallic films (Ti, TiN, and Al) were investigated as a hydrogen barrier during the passivation process. The Ti(&gt;500 Å) hydrogen barrier only showed the electrical properties of memories free from hydrogen damage. The formation of stable hydrides and the suppressed diffusion of hydrogen through the Ti films during the passivation processes resulted in sufficient switching polarization, low leakage current, and good reliabilities at high temperature." @default.
• W1518103677 created "2016-06-24" @default.
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• W1518103677 date "2000-08-28" @default.
• W1518103677 modified "2023-10-14" @default.
• W1518103677 title "Hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories" @default.
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• W1518103677 doi "https://doi.org/10.1063/1.1289913" @default.
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