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• W1850871538 abstract "Abstract The formation of partial AlGaN trench recess filled with multiple fluorinated gate dielectric layers as metal–insulator–semiconductor (MIS) gate structure for GaN-based HEMT power devices is designed, fabricated and experimentally verified. The approach realizes the device normally-off operational mode and at the same time is able to preserve the good mobility in the 2DEG channel for a maximum on-state current. Experimental measurements on the fabricated MIS–HEMT devices indicate a high gate threshold voltage ( V th ) at around 5 V and a very low gate leakage current at pA/mm level. This proposed gate structure provides very promising properties for GaN-based power semiconductor devices in future power electronics switching applications." @default.
• W1850871538 created "2016-06-24" @default.
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• W1850871538 date "2015-12-01" @default.
• W1850871538 modified "2023-10-04" @default.
• W1850871538 title "Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices" @default.
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• W1850871538 doi "https://doi.org/10.1016/j.sse.2015.09.006" @default.
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