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• W1966112728 startingPage "15946" @default.
• W1966112728 abstract "Si crystal growth on Ge(100) resulting from surface photochemical reaction is achieved using atomic layer epitaxy, alternating disilane exposure, and irradiation with synchrotron radiation. Self-limiting chemisorption with fractional ${mathrm{SiH}}_{mathit{x}}$ coverage and partial hydrogen removal in stimulated desorption results in a constant growth rate of 0.2 ML/cycle below thermal growth temperatures. The effects of gas and adsorbate excitation in photochemical vapor deposition are experimentally separated." @default.
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• W1966112728 date "1993-06-15" @default.
• W1966112728 modified "2023-09-26" @default.
• W1966112728 title "Si crystal growth mediated by synchrotron-radiation-stimulated hydrogen desorption" @default.
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• W1966112728 doi "https://doi.org/10.1103/physrevb.47.15946" @default.
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