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• W1984477414 endingPage "605" @default.
• W1984477414 startingPage "601" @default.
• W1984477414 abstract "A new photoresist for 157 nm lithography on the basis of poly[(2-hydroxy-3-pinanyl vinyl sulfonate)-co-4-(1, 1, 1, 3, 3, 3-hexafluoro-2-hydroxypropyl)styrene] [poly(VSO3Pina73-co-HFISt27)] and triphenylsulfonium perfluoro-1-butanesulfonate (TPS-Nf) as a photoacid generator (PAG) has been developed. Poly(VSO3Pina-co-HFISt)s were prepared by free radical polymerization of VSO3Pina with HFISt. The photoresist consisting of poly(VSO3Pina73-co-HFISt27) and 4 wt% TPS-Nf showed a sensitivity of 10 mJ cm-2 and a contrast of 6, when it was exposed to 157 nm laser and developed with 0.6 wt% aqueous tetramethylammonium hydroxide (TMAH) solution at 25 °C. A fine positive image of 140 nm line and space patterns was printed in a film, which was exposed to 15 mJ cm-2 by a contact printed mode. The resist film showed an optical density (OD) value of 3.6 μm-1 at 157 nm wavelength." @default.
• W1984477414 created "2016-06-24" @default.
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• W1984477414 date "2003-01-01" @default.
• W1984477414 modified "2023-10-17" @default.
• W1984477414 title "A New Photoresist Materials for 157nm Lithography-3: Poly [2-hydroxy-3-pinanyl vinyl sulfonate-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)styrene]" @default.
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• W1984477414 doi "https://doi.org/10.2494/photopolymer.16.601" @default.
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