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• W1993242112 startingPage "08JD09" @default.
• W1993242112 abstract "Low-resistivity and high-transmittance Al-doped ZnO (AZO) thin films were obtained by pulsed laser deposition with the substrate at room temperature. The electrical, optical, and structural properties of the AZO thin films deposited at various oxygen gas pressures ( P O2 ) were investigated. X-ray diffraction shows that the AZO thin films have (002) preferred orientation and the diffraction angle of the (002) plane shifts to a higher value with increasing oxygen gas pressure. All AZO thin films deposited under ambient oxygen gas pressure conditions have an optical transmittance of over 80% in the visible region. AZO thin films deposited at lower P O2 of ≤1 Pa have resistivities of <10 -3 Ω cm that increase with increasing P O2 > 1 Pa. The AZO film deposited at P O2 = 1 Pa had the lowest resistivity (5.8 ×10 -4 Ω cm) with a high carrier concentration of 1.1 ×10 21 cm -3 ." @default.
• W1993242112 created "2016-06-24" @default.
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• W1993242112 date "2011-08-01" @default.
• W1993242112 modified "2023-09-24" @default.
• W1993242112 title "Effect of Oxygen Gas Pressure on Electrical, Optical, and Structural Properties of Al-Doped ZnO Thin Films Fabricated by Pulsed Laser Deposition for Use as Transparent Electrodes in All-Solid-State Electrochromic Devices" @default.
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• W1993242112 doi "https://doi.org/10.1143/jjap.50.08jd09" @default.
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