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• W1996662044 abstract "The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects." @default.
• W1996662044 created "2016-06-24" @default.
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• W1996662044 date "2013-08-01" @default.
• W1996662044 modified "2023-09-27" @default.
• W1996662044 title "On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping" @default.
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• W1996662044 doi "https://doi.org/10.1063/1.4817834" @default.
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