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• W2014996881 abstract "The electrical transport characteristics of multiwall CN(x)/carbon nanotube intramolecular junctions were studied. The junctions could be used as diodes. We found that the rectification resulted from p-n junctions, not from metal-semiconductor junctions. The gate effect was very weak when the diodes were reverse biased. At forward bias, however, some of the p-n diodes could be n-type transistors. Experimental results supported the opinion that the gate voltage dependent property is derived from the Schottky barrier between the CN(x) part and the electrode. Using p-n diodes, a bipolar transistor with nanoscale components was built, whose behavior was very similar to that of a conventional planar bipolar transistor." @default.
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• W2014996881 date "2007-09-07" @default.
• W2014996881 modified "2023-09-23" @default.
• W2014996881 title "Gate voltage dependent characteristics of p–n diodes and bipolar transistors based on multiwall CNx/carbon nanotube intramolecular junctions" @default.
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• W2014996881 doi "https://doi.org/10.1088/0957-4484/18/39/395205" @default.
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