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• W2036707619 startingPage "170" @default.
• W2036707619 abstract "Since photon-assisted vapour deposition processes can grow damage-free thin films at low temperatures, such a process is investigated for deposition of silicon integrated circuit compatible SnO2 films in an attempt to fabricate ambient-sensitive resistors. In this work, a photochemical vapour deposition process for SnO2 deposition is carried out with a mercury UV lamp to activate the chemical sources of SnCl4 and O2 under a wide range of variation of process conditions. The properties of the thin films are characterized as functions of process parameters. In general, both polycrystalline and amorphous films with resistivity ranging from 10−3 to 0.1 Ωcm and optical transparency higher than 80% can be deposited at temperatures between 200 °C and 400 °C. The rates of deposition are enhanced by a factor of 3 for all temperature conditions. The refractive index slowly increases with growth temperature between 1.8 and 1.9." @default.
• W2036707619 created "2016-06-24" @default.
• W2036707619 creator A5005826910 @default.
• W2036707619 creator A5007979991 @default.
• W2036707619 date "1992-10-01" @default.
• W2036707619 modified "2023-09-25" @default.
• W2036707619 title "The effect of mercury UV photolysis on vapour deposition of SnO2" @default.
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• W2036707619 doi "https://doi.org/10.1016/0040-6090(92)90739-x" @default.
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