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- W2045789968 abstract "Abstract Heteroepitaxial CeO 2 (80 nm)/La 0.5 Sr 0.5 CoO 3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO 2 microjunctions patterned by a focused ion beam on a La 0.5 Sr 0.5 CoO 3 film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting or metallic low resistance state (ON) with resistance ratios up to 10 4 . The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown." @default.
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- W2045789968 date "2014-04-01" @default.
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- W2045789968 title "Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam" @default.
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- W2045789968 doi "https://doi.org/10.1016/j.tsf.2014.01.053" @default.
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