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• W2069366950 abstract "Using magneto-active plasma CVD, diamond films have been fabricated at 0.01 torr with a substrate temperature of about 400°C. From the viewpoint of increasing plasma density, a gas mixture,CH3OH/(H2 +He), obtained by adding a helium to a usually-used gas mixtureCH3OH/H2, has been employed in this study. For a constant CH3OH concentration (30%), microcrystalline diamond films of good quality can be obtained at a ratio ofHe/(H2 +He) up to 50%, and the growth rate increases with an increase in the ratio. WhenHe/(H2 +He) is higher than 50%, graphite appears in the film because of the heavy bombardment on the diamond surface by the accelerated helium species in the plasma at low pressure (0.01 torr)." @default.
• W2069366950 created "2016-06-24" @default.
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• W2069366950 date "1992-03-01" @default.
• W2069366950 modified "2023-10-17" @default.
• W2069366950 title "Low temperature diamond film fabrication using magneto-active plasma CVD" @default.
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• W2069366950 doi "https://doi.org/10.1016/0925-9635(92)90019-k" @default.
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