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- W2079169279 abstract "Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2¯ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p–n junction solar cells or diodes." @default.
- W2079169279 created "2016-06-24" @default.
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- W2079169279 date "2009-08-01" @default.
- W2079169279 modified "2023-10-13" @default.
- W2079169279 title "Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition" @default.
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- W2079169279 doi "https://doi.org/10.1016/j.jcrysgro.2009.07.020" @default.
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