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• W2116711438 abstract "Silicon nitride (SiNx) film has been deposited at a substrate temperature in the range of 200–800°C by a new radical-beam deposition technique. In the new technique, hexamethyldisilazane is decomposed not in plasma directly, but in a reaction with atomic nitrogen, in order to reduce carbon concentration into the film. The carbon concentration of the film is estimated to be of the order of 1019 cm-3 at most, based on secondary ion mass spectroscopy. The resistivity and the dielectric constant of the film are evaluated to be ∼1013 Ω·cm at 3 MV/cm and 5.7 at 300 kHz, respectively, which makes the film quality comparable to that of SiNx films deposited by plasma chemical vapor deposition." @default.
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• W2116711438 date "2004-01-09" @default.
• W2116711438 modified "2023-09-24" @default.
• W2116711438 title "Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source" @default.
• W2116711438 doi "https://doi.org/10.1143/jjap.43.l148" @default.
• W2116711438 hasPublicationYear "2004" @default.
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