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• W2142772095 abstract "Thin film capacitors of AlNd2O3Al structure are fabricated by the resistive heating method under a vacuum of 2.66 × 10−3 Pa. The thicknesses of the dielectric films are measured by a multiple beam interferometer. Aging, annealing, and dielectric properties are studied in the frequency range 1 to 30 kHz at various temperatures (303 to 483 K). The capacitance, though dependent on frequency and temperature, is found to be almost constant at room temperature for all frequencies. The relative variations in the capacitance normalized at 10 kHz are characterized. The loss factor, showing a loss peak minimum, increases with the rise of temperature and tan δmin shifts to higher frequencies. The dielectric constant (5.66), the temperature coefficients of capacitance (646 ppm/K) and permittivity (623 ppm/K), and the linear expansion coefficient (23 ppm/K) are evaluted at 1 kHz and at room temperature. From the plot of frequency (tan δmin) versus inverse absolute temperature two activation energies are determined as 0.245 eV and 0.037 eV in the high (>400 K) and low (<400 K) temperature region, respectively. Mittels Widerstandsheizermethode werden im Vakuum von 2,66 × 10−3 Pa Dünnschichtkondensatoren mit AlNd2O3Al-Struktur gefertigt. Die Dicke der dielektrischen Schichten werden mittels Vielstrahlinterferometer gemessen. Alterung, Ausheilung und dielektrische Eigenschaften werden im Frequenzbereich 1 bis 30 kHz bei verschiedenen Temperaturen (303 bis 483 K) untersucht. Es wird gefunden, daß die Kapazität, obwohl frequenz- und temperaturabhängig, bei Zimmertemperaturen für alle Frequenzen fast konstant ist. Die relativen änderungen der bei 10 kHz normierten Kapazität werden charakterisiert. Der Verlustfaktor mit einem Minimum, nimmt mit wachsender Temperatur zu und tan δmin verschiebt sich zu höheren Frequenzen. Die dielektrische Konstante (5,66), die Temperaturkoeffizienten der Kapazität (646 ppm/K) und Dielektrizitätskonstante (623 ppm/K) und der lineare Ausdehnungskoeffizient (23 ppm/K) werden für 1 kHz und Zimmertemperatur berechnet. Zwei Aktivierungsenergien werden aus dem Verlauf der Frequenz (tan δmin) über der reziproken absoluten Temperatur zu 0,245 eV und 0,037 eV im Hoch- (>400 K) bzw. Nieder- (<400 K)-Temperaturbereich bestimmt." @default.
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• W2142772095 date "1990-10-16" @default.
• W2142772095 modified "2023-09-25" @default.
• W2142772095 title "Aging, Annealing, and Dielectric Properties of Neodymium Oxide Thin Films" @default.
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• W2142772095 doi "https://doi.org/10.1002/pssa.2211210221" @default.
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