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• W2197778994 abstract "The results of atomic layer deposition of on silicon using the precursors and are reported. The films are stoichiometric at the surface, becoming Ta-rich as the interface is approached. For deposition temperatures from and chamber pressures from , the deposition rate exhibits two growth regimes, postulated to be due to differences in the densities of hydroxyl species on the chemically cleaned Si substrates and on the deposited layer. Growth rate in the converged regime, in which has completely covered the substrate, is more strongly affected by the partial pressure of the than by that of the . A comparison is made between the growth rate and the surface coverage of calculated with a simple Langmuir model. The deposited phase changes from amorphous to crystalline (hexagonal) in the same interval of pressure and temperature. The controlling factor for formation of the hexagonal polymorph is the partial pressure of the precursor. The extent of surface coverage of alone does not adequately account for the dependence of the extent of crystallization on pressure and temperature, and it is likely that there are additional important surface reaction components." @default.
• W2197778994 created "2016-06-24" @default.
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• W2197778994 date "2005-01-01" @default.
• W2197778994 modified "2023-09-23" @default.
• W2197778994 title "Atomic Layer Deposition of Hexagonal-Phase Ta[sub 2]O[sub 5] Using TaF[sub 5] and H[sub 2]O" @default.
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• W2197778994 doi "https://doi.org/10.1149/1.1890726" @default.
• W2197778994 hasPublicationYear "2005" @default.
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