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• W2280455505 endingPage "16167" @default.
• W2280455505 startingPage "16162" @default.
• W2280455505 abstract "Indium(III) selenide, In2Se3, thin films were electrodeposited at room temperature from an aqueous solution containing ionic precursors for both In and Se, using potential pulse atomic layer deposition (PP-ALD). Cyclic voltammetry was used to determine approximate cycle potentials, and anodic and cathodic potentials were systematically examined to optimize the potential pulse program for In2Se3. Electron probe microanalysis was used to follow the In:Se atomic ratio as a function of the cycle conditions, and annealing studies were performed on stoichiometric deposits. Film thickness was a function of both the anodic and cathodic potentials. The optimum growth rate was consistent with previous PP-ALD studies in which similar concentrations and pulse times were employed, 0.02 nm/cycle. The use of the potential pulse cycle for film growth resulted in surface-limited control over the deposit stoichiometry each cycle and thus a layer-by-layer growth process." @default.
• W2280455505 created "2016-06-24" @default.
• W2280455505 creator A5038100254 @default.
• W2280455505 creator A5039429944 @default.
• W2280455505 date "2016-02-22" @default.
• W2280455505 modified "2023-09-26" @default.
• W2280455505 title "Electrodeposition of In₂Se₃ Using Potential Pulse Atomic Layer Deposition" @default.
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• W2280455505 doi "https://doi.org/10.1021/acs.jpcc.6b00320" @default.
• W2280455505 hasPublicationYear "2016" @default.
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