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• W2333516752 endingPage "04ED04" @default.
• W2333516752 startingPage "04ED04" @default.
• W2333516752 abstract "Abstract We experimentally studied the SiO 2 /Si and Si/buried oxide (BOX) interface regions of a two-dimensional (2D) Si layer, by forming gas annealing (FGA). A photoluminescence (PL) result measured at various lattice temperature, T L , values shows that the PL intensity I PL of the 2D-Si layer rapidly increases and then saturates with increasing FGA temperature, T A , and time, t A . I PL also increases with decreasing T L . A one-dimensional (1D) Schroedinger equation simulator indicates that some of the electrons in the 2D-Si layer generated by a PL excitation laser are quantum–mechanically transmitted into Si interface regions. Actually, we experimentally confirmed that the PL spectra of the 2D-Si layer can be fitted by the PL emission from two regions with different PL peak photon energy values, E PH , which consist of a typical 2D-Si and the interface regions of both the surface SiO 2 /Si and Si/BOX. Thus, this forming gas dependence is probably attributable to the improved lifetime τ of electrons in the surface interface region, because the Si surface is terminated by H atoms. Moreover, the E PH of the interface region is higher than that of the 2D-Si layer, because of the graded increased bandgap in the interface regions. However, the E PH of 2D-Si is independent of both T A and T L , and this T L independence does not agree with that of a 3D-Si layer. Consequently, we experimentally verified the larger impact of the Si interface on the performance of 2D-Si layer." @default.
• W2333516752 created "2016-06-24" @default.
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• W2333516752 date "2016-03-04" @default.
• W2333516752 modified "2023-09-25" @default.
• W2333516752 title "Experimental study on interface region of two-dimensional Si layers by forming gas annealing" @default.
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• W2333516752 doi "https://doi.org/10.7567/jjap.55.04ed04" @default.
• W2333516752 hasPublicationYear "2016" @default.
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